Dicarboxylic Acid-Assisted Surface Oxide Removal and Passivation of Indium Antimonide Colloidal Quantum Dots for Short-Wave Infrared Photodetectors.

Heavy-metal-free III-V colloidal quantum dots (CQDs) are promising materials for solution-processed short-wave infrared (SWIR) photodetectors. Recent progress in the synthesis of indium antimonide (InSb) CQDs with sizes smaller than the Bohr exciton radius enables quantum-size effect tuning of the band gap. However, it has been challenging to achieve uniform InSb CQDs with band gaps below 0.9 eV, as well as to control the surface chemistry of these large-diameter CQDs. This has, to date, limited the development of InSb CQD photodetectors that are sensitive to ≥ ${\ge }$ 1400 nm light. Here we adopt solvent engineering to facilitate a diffusion-limited growth regime, leading to uniform CQDs with a band gap of 0.89 eV. We then develop a CQD surface reconstruction strategy that employs a dicarboxylic acid to selectively remove the native In/Sb oxides, and enables a carboxylate-halide co-passivation with the subsequent halide ligand exchange. We find that this strategy reduces trap density by half compared to controls, and enables electronic coupling among CQDs. Photodetectors made using the tailored CQDs achieve an external quantum efficiency of 25 % at 1400 nm, the highest among III-V CQD photodetectors in this spectral region.

Transient Measurements and Simulations Correlate Exchange Ligand Concentration and Trap States in Colloidal Quantum Dot Photodetectors.

Colloidal quantum dot (CQD) photodetectors (PDs) can detect wavelengths longer than the 1100 nm limit of silicon because of their highly tunable bandgaps. CQD PDs are acutely affected by the ligands that separate adjacent dots in a CQD-solid. Optimizing the exchange solution ligand concentration in the processing steps is crucial to achieving high photodetector performance. However, the complex mix of chemistry and optoelectronics involved in CQD PDs means that the effects of the exchange solution ligand concentration on device physics are poorly understood. Here we report direct correspondence between simulated and experimental transient photocurrent responses in CQD PDs. For both deficient and excess conditions, our model demonstrated the experimental changes to the transient photocurrent aligned with changes in trap state density. Combining transient photoluminescence, absorption, and photocurrent with this simulation model, we revealed that different mechanisms are responsible for the increased trap density induced by excess and deficient active layer ligand concentrations.

Halide-Driven Synthetic Control of InSb Colloidal Quantum Dots Enables Short-Wave Infrared Photodetectors.

In the III-V family of colloidal quantum dot (CQD) semiconductors, InSb promises access to a wider range of infrared wavelengths compared to many light-sensing material candidates. However, achieving the necessary size, size-dispersity, and optical properties has been challenging. Here the synthetic challenges associated with InSb CQDs are investigated and it is found that uncontrolled reduction of the antimony precursor hampers the controlled growth of CQDs. To overcome this, a synthetic strategy that combines nonpyrophoric precursors with zinc halide additives is developed. The experimental and computational studies show that zinc halide additives decelerate the reduction of the antimony precursor, facilitating the growth of more uniformly sized CQDs. It is also found that the halide choice provides additional control over the strength of this effect. The resultant CQDs exhibit well-defined excitonic transitions in spectral range of 1.26-0.98 eV, along with strong photoluminescence. By implementing a postsynthesis ligand exchange, colloidally stable inks enabling the fabrication of high-quality CQD films are achieved. The first demonstration of InSb CQD photodetectors is presented reaching 75% external quantum efficiency (QE) at 1200 nm, to the knowledge the highest short-wave infrared (SWIR) QE reported among heavy-metal-free infrared CQD-based devices.

Control over Charge Carrier Mobility in the Hole Transport Layer Enables Fast Colloidal Quantum Dot Infrared Photodetectors.

Solution-processed colloidal quantum dots (CQDs) are promising materials for photodetectors operating in the short-wavelength infrared region (SWIR). Devices typically rely on CQD-based hole transport layers (HTL), such as CQDs treated using 1,2-ethanedithiol. Herein, we find that these HTL materials exhibit low carrier mobility, limiting the photodiode response speed. We develop instead inverted (p-i-n) SWIR photodetectors operating at 1370 nm, employing NiOx as the HTL, ultimately enabling 4× shorter fall times in photodiodes (∼800 ns for EDT and ∼200 ns for NiOx). Optoelectronic simulations reveal that the high carrier mobility of NiOx enhances the electric field in the active layer, decreasing the overall transport time and increasing photodetector response time.

Large piezoelectric response in a Jahn-Teller distorted molecular metal halide.

Piezoelectric materials convert between mechanical and electrical energy and are a basis for self-powered electronics. Current piezoelectrics exhibit either large charge (d33) or voltage (g33) coefficients but not both simultaneously, and yet the maximum energy density for energy harvesting is determined by the transduction coefficient: d33*g33. In prior piezoelectrics, an increase in polarization usually accompanies a dramatic rise in the dielectric constant, resulting in trade off between d33 and g33. This recognition led us to a design concept: increase polarization through Jahn-Teller lattice distortion and reduce the dielectric constant using a highly confined 0D molecular architecture. With this in mind, we sought to insert a quasi-spherical cation into a Jahn-Teller distorted lattice, increasing the mechanical response for a large piezoelectric coefficient. We implemented this concept by developing EDABCO-CuCl4 (EDABCO = N-ethyl-1,4-diazoniabicyclo[2.2.2]octonium), a molecular piezoelectric with a d33 of 165 pm/V and g33 of ~2110 × 10-3 V m N-1, one that achieved thusly a combined transduction coefficient of 348 × 10-12 m3 J-1. This enables piezoelectric energy harvesting in EDABCO-CuCl4@PVDF (polyvinylidene fluoride) composite film with a peak power density of 43 µW/cm2 (at 50 kPa), the highest value reported for mechanical energy harvesters based on heavy-metal-free molecular piezoelectric.

Quantum-Size-Effect Tuning Enables Narrowband IR Photodetection with Low Sunlight Interference.

Infrared photodetection enables depth imaging techniques such as structured light and time-of-flight. Traditional photodetectors rely on silicon (Si); however, the bandgap of Si limits photodetection to wavelengths shorter than 1100 nm. Photodetector operation centered at 1370 nm benefits from lower sunlight interference due to atmospheric absorption. Here, we report 1370 nm-operating colloidal quantum dot (CQD) photodetectors and evaluate their outdoor performance. We develop a surface-ligand engineering strategy to tune the electronic properties of each CQD layer and fabricate photodetectors in an inverted (PIN) architecture. The strategy enables photodetectors with an external quantum efficiency of 75% and a low dark current (1 µA/cm2). Outdoor testing demonstrates that CQD-based photodetectors combined with a 10 nm-line width bandpass filter centered at 1370 nm achieve over 2 orders of magnitude (140× at incident intensity 1 µW/cm2) higher signal-to-background ratio than do Si-based photodetectors that use an analogous bandpass filter centered at 905 nm.

Controlled Crystal Plane Orientations in the ZnO Transport Layer Enable High-Responsivity, Low-Dark-Current Infrared Photodetectors.

Colloidal quantum dots (CQD) have emerged as attractive materials for infrared (IR) photodetector (PD) applications because of their tunable bandgaps and facile processing. Presently, zinc oxide is the electron-transport layer (ETL) of choice in CQD PDs; however, ZnO relies on continuous ultraviolet (UV) illumination to remove adsorbed oxygen and maintain high external quantum efficiency (EQE), speed, and photocurrent. Here, it is shown that ZnO is dominated by electropositive crystal planes which favor excessive oxygen adsorption, and that this leads to a high density of trap states, an undesired shift in band alignment, and consequent poor performance. Over prolonged operation without UV exposure, oxygen accumulates at the electropositive planes, trapping holes and degrading performance. This problem is addressed by developing an electroneutral plane composition at the ZnO surface, aided by atomic layer deposition (ALD) as the means of materials processing. It is found that ALD ZnO has 10× lower binding energy for oxygen than does conventionally deposited ZnO. IR CQD PDs made with this ETL do not require UV activation to maintain low dark current and high EQE.

Solvent-Assisted Kinetic Trapping in Quaternary Perovskites.

Engineering halide perovskites through alloying allows synthesis of materials having tuned electronic and optical properties; however, synthesizing many of these alloys is hindered by the formation of demixed phases arising due to thermodynamically unstable crystal structures. Methods have been developed to make such alloys, such as solid-phase reactions, chemical vapor deposition, and mechanical grinding; but these are incompatible with low-temperature solution-processing and monolithic integration, precluding a number of important applications of these materials. Here, solvent-phase kinetic trapping (SPKT), an approach that enables the synthesis of novel thermodynamically unfavored perovskite alloys, is developed. SPKT is used to synthesize Cs1- x Rbx PbCl3 and report the first instance of ultraviolet emission in polycrystalline perovskite thin films. SPKT leads to materials exhibiting superior thermal and photostability compared to non-kinetically trapped materials of the same precursors. Transient absorption spectroscopy of the kinetically trapped material reveals improved optical properties: greater absorption, and longer ground-state bleach lifetimes. SPKT may be applied to other perovskites to realize improved material properties while benefiting from facile solution-processing.

Deep-Blue Perovskite Single-Mode Lasing through Efficient Vapor-Assisted Chlorination.

Metal halide perovskites have emerged as promising candidates for solution-processed laser gain materials, with impressive performance in the green and red spectral regions. Despite exciting progress, deep-blue-an important wavelength for laser applications-remains underexplored; indeed, cavity integration and single-mode lasing from large-bandgap perovskites have yet to be achieved. Here, a vapor-assisted chlorination strategy that enables synthesis of low-dimensional CsPbCl3  thin films exhibiting deep-blue emission is reported. Using this approach,  high-quality perovskite thin films having a low surface roughness (RMS ≈ 1.3 nm) and efficient charge transfer properties are achieved. These enable us to document low-threshold amplified spontaneous emission. Levering the high quality of the gain medium,  vertical-cavity surface-emitting lasers with a low lasing threshold of 6.5 µJ cm-2  are fabricated. This report of deep-blue perovskite single-mode lasing showcases the prospect of increasing the range of deep-blue laser sources.

Dimensional Mixing Increases the Efficiency of 2D/3D Perovskite Solar Cells.

2D/3D heterojunction perovskite solar cells have demonstrated superior efficiency and stability compared to their fully 3D counterparts. Previous studies have focused on producing 2D layers containing predominantly n = 1 perovskite quantum wells. In this report we demonstrate a technique to introduce dimensional mixing into the 2D layer, and we show that this leads to more efficient devices relative to controls. Simulations suggest that the improvements are due to a reduction in trap state density and superior band alignment between the 3D/2D perovskite and the hole-transporting layer.